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Home › Self-aligned method for fabricating a capacitor under bit-line (cub) dynamic random access memory (DRAM) cell structure

Self-aligned method for fabricating a capacitor under bit-line (cub) dynamic random access memory (DRAM) cell structure

US Patent 6627493 · Granted Sep 30, 2003

Estimated economic value: $5,110,000 ⓘ

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