Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor devices containing a discontinuous cap layer and methods for forming same

Semiconductor devices containing a discontinuous cap layer and methods for forming same

US Patent 6943451 · Granted Sep 13, 2005

Estimated economic value: $5,632,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Anti-fuse and fuse structures for improving the functionality of qubit circuits2025
Buried power rail at tight cell-to-cell space2025
Structure containing a via-to-buried power rail contact structure or a via-to-ba2025
Anti-fuse and fuse structures for improving the functionality of qubit circuits2025
Layered substrate structures with aligned optical access to electrical devices2024
Layered substrate structures with aligned optical access to electrical devices2024
Create a protected layer for interconnects and devices in a packaged quantum str2024
Multimodal intent entity resolver2024
Microwave-to-optical quantum transducers2023
Multimodal intent entity resolver2023
Rules engine for social learning2022
Providing targeted, evidence-based recommendations to improve content by combini2022