Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Low temperature nitridation of amorphous high-K metal-oxide in inter-gates insulator stack

Low temperature nitridation of amorphous high-K metal-oxide in inter-gates insulator stack

US Patent 6933218 · Granted Aug 23, 2005

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nonvolatile memories with tunnel dielectric with chlorine2010
Use of TEOS oxides in integrated circuit fabrication processes2008
Use of TEOS oxides in integrated circuit fabrication processes2008
Fabrication of semiconductor device exhibiting reduced dielectric loss in isolat2008
Use of pedestals to fabricate contact openings2007
Use of chlorine to fabricate trench dielectric in integrated circuits2007
Control of air gap position in a dielectric layer2006
Use of multiple etching steps to reduce lateral etch undercut2006
Formation of removable shroud by anisotropic plasma etch2006
Reduced thickness variation in a material layer deposited in narrow and wide int2006
Formation of a double gate structure2005
Method of making a silicon nitride film that is transmissive to ultraviolet ligh2005