Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Capacitance parameters calculation method for MOSFET and program therefor

Capacitance parameters calculation method for MOSFET and program therefor

US Patent 6931609 · Granted Aug 16, 2005

Estimated economic value: $23,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device, memory device, and method for forming transistor on substr2024
Simulation parameter extracting method of MOS transistor2013
Semiconductor device including semiconductor evaluation element, and evaluation 2010
Hyperbolic type channel MOSFET2003
Computer simulation method for semiconductor device2003
Method for process simulation2003
Semiconductor device having improved short channel resistance2002
Semiconductor process device simulation method and storage medium storing simula2002
Reverse profiling method for profiling modulated impurity density distribution o2001
Computer simulation method of impurity with pileup phenomenon2000
Method of simulating impact ionization phenomenon in semiconductor device2000
Diffusion simulation method for impurities using mesh points and branches utiliz2000