{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate", "item": "https://www.patentleaderboard.com/patent/6911766"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate

Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate

US Patent 6911766 · Granted Jun 28, 2005

Estimated economic value: $1,463,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electrode structures, display devices containing the same2009
Method and apparatus for programmable field emission display2008
Field effect transistor fabrication methods, field emission device fabrication m2008
Field emission display with smooth aluminum film2007
Nitrogen and phosphorus doped amorphous silicon as resistor for field emission d2007
Nitrogen and phosphorus doped amorphous silicon as resistor for field emission d2007
Aluminum-containing film derived from using hydrogen and oxygen gas in sputter d2007
Method to increase the emission current in FED displays through the surface modi2006
Method of forming nitrogen and phosphorus doped amorphous silicon as resistor fo2006
Method of forming nitrogen and phosphorus doped amorphous silicon as resistor fo2006
Field emission display device2006
Field emission display with smooth aluminum film2006