{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same", "item": "https://www.patentleaderboard.com/patent/6900100"}]}

Home › Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same

Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same

US Patent 6900100 · Granted May 31, 2005

Assignee

Advanced Analogic Technologies Incorporated

Inventors

Richard K. Williams (316 patents)
Wayne B. Grabowski (32 patents)

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