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Home › Semiconductor integrated circuit device including MISFETs each with a gate electrode extended over a boundary region between an active region and an element isolation trench

Semiconductor integrated circuit device including MISFETs each with a gate electrode extended over a boundary region between an active region and an element isolation trench

US Patent 6897499 · Granted May 24, 2005

Estimated economic value: $73,000 ⓘ

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