Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming integrated circuitry and method of forming shallow trench isolation in a semiconductor substrate

Method of forming integrated circuitry and method of forming shallow trench isolation in a semiconductor substrate

US Patent 6897120 · Granted May 24, 2005

Estimated economic value: $1,184,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electronic devices comprising adjoining oxide materials and related systems2023
Methods of forming an apparatus for making semiconductor dieves2021
Semiconductor constructions2018
Substrate mask patterns, methods of forming a structure on a substrate, methods 2017
Semiconductor constructions2017
Substrate mask patterns, methods of forming a structure on a substrate, methods 2015
Methods of forming a pattern on a substrate2014
Methods of forming a pattern on a substrate2014
Method to reduce charge buildup during high aspect ratio contact etch2014
Contact integration for three-dimensional stacking semiconductor devices2014
Method to reduce charge buildup during high aspect ratio contact etch2011
Methods of forming openings into dielectric material2008