Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming shallow trench isolation with chamfered corners

Method of forming shallow trench isolation with chamfered corners

US Patent 6884714 · Granted Apr 26, 2005

Estimated economic value: $68,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device structure with liner layer having tapered sidewall and meth2025
Semiconductor device with peripheral gate structure and method for fabricating t2025
Semiconductor device with adjustment layers and method for fabricating the same2025
Semiconductor device with work function layer2025
Semiconductor device with porous dielectric layers and method for fabricating th2025
Semiconductor device with shallow contacts and method for fabricating the same2025
Semiconductor device with an insulative decoupling unit positioned between two o2025
Semiconductor structure with a porous structure2025
Semiconductor device with contact structure and method for fabricating the same2025
Semiconductor device with shallow contacts and method for fabricating the same2025
Method for fabricating semiconductor device with liner structure2025
Semiconductor device with buried gate structures and method for preparing the sa2025