Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Manufacturing of a low-noise mos device

Manufacturing of a low-noise mos device

US Patent 6884703 · Granted Apr 26, 2005

Estimated economic value: $68,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Wireless reference signal distribution2022
Monolithically integrated circuit2015
Low phase noise buffer for crystal oscillator2013
Monolithically integrated circuit2012
Circuitry and method for reducing second and third-order nonlinearities2012
True root-mean-square detection with a sub-threshold transistor bridge circuit2011
Method for fabrication of a capacitor, and a monolithically integrated circuit c2011
Passive mixer power detector method and apparatus2010
Semiconductor process and PMOS varactor2010
Apparatus and method for exploiting reverse short channel effects in transistor 2010
Method in the fabrication of a monolithically integrated vertical device on an S2009
LDMOS transistor device, integrated circuit, and fabrication method thereof2009