Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Conductance-voltage (GV) based method for determining leakage current in dielectrics

Conductance-voltage (GV) based method for determining leakage current in dielectrics

US Patent 6879176 · Granted Apr 12, 2005

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Elastic metal gate MOS transistor for surface mobility measurement in semiconduc2008
Method and system for automatically determining electrical properties of a semic2007
Method and apparatus for determining generation lifetime of product semiconducto2006
Work function controlled probe for measuring properties of a semiconductor wafer2006
Apparatus and method for detecting soft breakdown of a dielectric layer of a sem2006
Method of electrical characterization of a silicon-on-insulator (SOI) wafer2006
Method of determining one or more properties of a semiconductor wafer2004
Non-invasive electrical measurement of semiconductor wafers2002
Noncontact capacitance measuring device2000
Apparatus and method for non-invasive measurement of electrical properties of a 1991