Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for reactive ion etch processing of a dual damascene structure

Method for reactive ion etch processing of a dual damascene structure

US Patent 6875688 · Granted Apr 5, 2005

Estimated economic value: $5,479,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Process integration techniques using a carbon layer to form self-aligned structu2020
Method for bottom-up deposition of a film in a recessed feature2018
Method for using post-processing methods for accelerating EUV lithography2017
Etch process for reducing directed self assembly pattern defectivity using direc2015
Etch process for reducing directed self assembly pattern defectivity2015
Dry metal etching method2014
Formation of SiOCl-containing layer on spacer sidewalls to prevent CD loss durin2014
Combined silicon oxide etch and contamination removal process2014
Formation of SiOCl-containing layer on exposed low-k surfaces to reduce low-k da2013
Sidewall and chamfer protection during hard mask removal for interconnect patter2013
On-chip cooling for integrated circuits2013
Self-aligned patterned etch stop layers for semiconductor devices2013