Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Apparatus for determining an overlay error and critical dimensions in a semiconductor structure by means of scatterometry

Apparatus for determining an overlay error and critical dimensions in a semiconductor structure by means of scatterometry

US Patent 6816252 · Granted Nov 9, 2004

Estimated economic value: $3,568,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Valve for pressure compensation and/or for emergency venting of a container, in 2023
Modular switch apparatus for controlling at least one electric drive2023
Method and device for controlling an electrical or electronic switching element2019
Electrical apparatus for the short-circuit protection of a three-phase load in a2016
Use of aqueous guanidinium formate solutions for the selective catalytic reducti2014
Method and device for the detection of current asymmetries in three-phase circui2013
Method for the selective catalytic reduction of nitrogen oxides in exhaust gases2011
Method and system for reducing overlay errors within exposure fields by APC cont2010
Structure and method for determining an overlay accuracy2010
Structure and method for simultaneously determining an overlay accuracy and patt2010
Two-dimensional structure for determining an overlay accuracy by means of scatte2006
Scatterometer including an internal calibration system2004