Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Homoepitaxial gallium nitride based photodetector and method of producing

Homoepitaxial gallium nitride based photodetector and method of producing

US Patent 6806508 · Granted Oct 19, 2004

Estimated economic value: $134,366,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Oxygen-doped group III metal nitride and method of manufacture2025
Ultrapure mineralizer and improved methods for nitride crystal growth2025
Group III nitride substrate with oxygen gradient, method of making, and method o2025
Aluminum-containing nitride ceramic matrix composite, method of making, and meth2024
Large area group III nitride crystals and substrates, methods of making, and met2024
Power photodiode structures and devices2024
Ultrapure mineralizer and improved methods for nitride crystal growth2024
Methods for coupling of optical fibers to a power photodiode2024
Oxygen-doped group III metal nitride and method of manufacture2024
Reusable nitride wafer, method of making, and use thereof2023
Large area group III nitride crystals and substrates, methods of making, and met2023
Group III nitride substrate, method of making, and method of use2023