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USPTO Patent Rankings Data through Dec 31, 2025
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Nicole Evers — 8 Patents

GE: 7 patents #4,957 of 36,430Top 15%
MGMomentive Performance Materials Gmbh: 1 patents #331 of 627Top 55%
Niskayuna, NY: #370 of 949 inventorsTop 40%
New York: #18,190 of 115,490 inventorsTop 20%
Overall (All Time): #600,572 of 4,157,543Top 15%
8 Patents All Time
Nicole Evers has been granted 8 US patents while listed as an inventor at GE. The first was granted in 2004 and the most recent in January 2012. Nicole Evers ranks #600,572 of 4,157,543 US inventors in our database (top 14.4%). Patent records list Nicole Evers in Niskayuna, NY, US.

Issued Patents All Time

Showing 1–8 of 8 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
8089097 Homoepitaxial gallium-nitride-based electronic devices and method for producing same Mark Phillip D'Evelyn, An-Ping Zhang, Jesse Berkley Tucker, Jeffrey Fedison 2012-01-03
7291544 Homoepitaxial gallium nitride based photodetector and method of producing Mark P. D'Evelyn, Kanin Chu 2007-11-06 $72,956,000
7145345 Current transformers for partial discharge detection on aircraft cables and wires Janos Sarkozi 2006-12-05 $43,543,000
7142291 Detection of partial discharge or arcing in wiring via fiber optics Janos Sarkozi 2006-11-28 $37,221,000
7053413 Homoepitaxial gallium-nitride-based light emitting device and method for producing Mark P. D'Evelyn, Steven Francis LeBoeuf, Xian-An Cao, An-Ping Zhang 2006-05-30 $23,397,000
7030621 Low current AC partial discharge diagnostic system for wiring diagnostics Janos Sarkozi 2006-04-18 $32,004,000
6936488 Homoepitaxial gallium-nitride-based light emitting device and method for producing Mark P. D'Evelyn 2005-08-30 $23,976,000
6806508 Homoepitaxial gallium nitride based photodetector and method of producing Mark P. D'Evelyn, Kanin Chu 2004-10-19 $134,366,000