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Home › Method and circuit to investigate charge transfer array transistor characteristics and aging under realistic stress and its implementation to DRAM MOSFET array transistor

Method and circuit to investigate charge transfer array transistor characteristics and aging under realistic stress and its implementation to DRAM MOSFET array transistor

US Patent 6762966 · Granted Jul 13, 2004

Estimated economic value: $8,966,000 ⓘ

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