Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Amorphizing ion implant method for forming polysilicon emitter bipolar transistor

Amorphizing ion implant method for forming polysilicon emitter bipolar transistor

US Patent 6740563 · Granted May 25, 2004

Estimated economic value: $7,575,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Synthesis of aligned carbon nanotubes on double-sided metallic substrate by chem2013
Amorphizing ion implant method for forming polysilicon emitter bipolar transisto2006
Amorphizing ion implant method for forming polysilicon emitter bipolar transisto2006
Polysilicon structures with different resistance values for gate electrodes, res2003
Implant method for forming Si3N4 spacer2003
Implant method for forming Si3N4 spacer2002
Method to prevent auto-doping induced threshold voltage shift2001
Method of fabricating polysilicon structures with different resistance values fo2000
Prevention of corrosion of aluminum interconnects by removing corrosion-inducing1997