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Home › Lower temperature method for forming high quality silicon-nitrogen dielectrics

Lower temperature method for forming high quality silicon-nitrogen dielectrics

US Patent 6730977 · Granted May 4, 2004

Estimated economic value: $10,969,000 ⓘ

Assignee

Texas Instruments

Inventors

Glen Wilk (49 patents)
John Mark Anthony (13 patents)
Yi Wei (21 patents)
Robert M. Wallace (55 patents)

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