Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Electromigration characteristics of patterned metal features in semiconductor devices

Electromigration characteristics of patterned metal features in semiconductor devices

US Patent 6677647 · Granted Jan 13, 2004

Estimated economic value: $5,601,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods for forming oxide dispersion-strengthened alloys2016
Semiconductor memory devices and methods for fabricating the same2007
Tri-level segmented control transistor and fabrication method2003
Photolithographic system including light filter that compensates for lens error2003
Punch-through via with conformal barrier liner2003
H2 diffusion barrier formation by nitrogen incorporation in oxide layer2002
Implanted barrier layer for retarding upward diffusion of substrate dopant2002
Method of silicide formation by silicon pretreatment2002
Dopant diffusion-retarding barrier region formed within polysilicon gate layer2002
Dielectric having an air gap formed between closely spaced interconnect lines2002
Method of making an IGFET using solid phase diffusion to dope the gate, source a2002
Semiconductor isolation region bounded by a trench and covered with an oxide to 2002