Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor component having double passivating layers formed of two passivating layers of different dielectric materials

Semiconductor component having double passivating layers formed of two passivating layers of different dielectric materials

US Patent 6664612 · Granted Dec 16, 2003

Estimated economic value: $238,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Integrated circuit with floating-gate electrodes including a transition metal an2012
Memory device and method providing logic connections for data transfer2011
Integrated circuit including a first gate stack and a second gate stack and a me2011
Integrated circuit with an active area line having at least one form-supporting 2011
Memory cell arrangements2010
Integrated circuit, method to program a memory cell array of an integrated circu2010
Method of manufacturing at least one semiconductor component and memory cells2010
Method for forming trenches on a surface of a semiconductor substrate2010
Integrated circuit having NAND memory cell strings2010
Integrated circuit having a cell with a resistivity changing layer2010
Method of forming a semiconductor memory device and semiconductor memory device2010
Resistive memory element and method of fabrication2010