Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Silicon carbide inversion channel mosfets

Silicon carbide inversion channel mosfets

US Patent 6653659 · Granted Nov 25, 2003

Estimated economic value: $19,693,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods of forming ohmic contacts on semiconductor devices with trench/mesa stru2025
Manufacture of power MOSFETs2025
Semiconductor devices having gate resistors with low variation in resistance val2025
Vertical power devices having mesas and etched trenches therebetween2025
Support shield structures for trenched semiconductor devices2025
And manufacture of robust, high-performance devices2025
Manufacture of robust, high-performance devices2025
Vertical power devices fabricated using implanted methods2025
Power semiconductor devices including a trenched gate and methods of forming suc2025
Trench bottom shielding methods and approaches for trenched semiconductor device2025
Manufacture of power devices having increased cross over current2025
Protection structures for semiconductor devices with sensor arrangements2025