Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Apparatus and method for determining doping concentration of a semiconductor wafer

Apparatus and method for determining doping concentration of a semiconductor wafer

US Patent 6632691 · Granted Oct 14, 2003

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Wear test apparatus2019
In-situ wafer and probe desorption using closed loop heating2007
Method of measuring semiconductor wafers with an oxide enhanced probe2007
Method of detecting un-annealed ion implants2007
Non-contact mobile charge measurement with leakage band-bending and dipole corre2007
Method and apparatus for determining concentration of defects and/or impurities 2007
Semiconductor substrate surface preparation using high temperature convection he2006
Method and apparatus for determining the dielectric constant of a low permittivi2006
Work function controlled probe for measuring properties of a semiconductor wafer2006
Method and apparatus for removing and/or preventing surface contamination of a p2006
Apparatus and method for detecting soft breakdown of a dielectric layer of a sem2006
Apparatus and method for measuring semiconductor wafer electrical properties2005