Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Silicon carbide n-channel power LMOSFET

Silicon carbide n-channel power LMOSFET

US Patent 6593594 · Granted Jul 15, 2003

Estimated economic value: $1,150,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Passivated silicon carbide devices with low leakage current and method of fabric2004
Silicon carbide lateral metal-oxide semiconductor field-effect transistor having2003
Method for improving inversion layer mobility in a silicon carbide metal-oxide s2003
Superior silicon carbide integrated circuits and method of fabricating2003
Method achieving higher inversion layer mobility in novel silicon carbide semico2002
Passivated silicon carbide devices with low leakage current and method of fabric2002
Silicon carbide LMOSFET with gate reach-through protection2002
Self-aligned silicon carbide LMOSFET2001
Superior silicon carbide integrated circuits and method of fabricating2001
Method of forming a laterally-varying charge profile in silicon carbide substrat2000
Lateral silicon carbide semiconductor device having a drift region with a varyin2000
Methods of fabricating voltage breakdown resistant monocrystalline silicon carbi1997