Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a laterally-varying charge profile in silicon carbide substrate

Method of forming a laterally-varying charge profile in silicon carbide substrate

US Patent 6096663 · Granted Aug 1, 2000

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Thermally-conductive features positioned adjacent to an optical component2024
Photonic devices integrated with thermally conductive layers2024
Thermally-conductive features positioned adjacent to an optical component2023
Thermal management of an optical component for temperature control2023
Optical components with enhanced heat dissipation2023
Hybrid edge couplers with stacked inverse tapers2022
Semiconductor detectors integrated with Bragg reflectors2020
Bragg gratings with airgap cladding2020
Semiconductor structure with a dopant implant region having a linearly graded co2017
Semiconductor structure with a dopant implant region having a linearly graded co2017
Low leakage, high frequency devices2016
Integrated circuit with trimming2016