Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Multi-bit programmable memory cell having multiple anti-fuse elements

Multi-bit programmable memory cell having multiple anti-fuse elements

US Patent 6590797 · Granted Jul 8, 2003

Estimated economic value: $3,821,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

FFT-DRAM2024
FFT-dram2022
Fluctuation resistant FinFET2017
Reduced variation MOSFET using a drain-extension-last process2016
Apparatus and method for improved leakage current of silicon on insulator transi2012
Method for reducing leakage current and increasing drive current in a metal-oxid2011
Method and apparatus for dynamic threshold voltage control of MOS transistors in2011
Apparatus for using a well current source to effect a dynamic threshold voltage 2011
Apparatus and method for improving drive-strength and leakage of deep submicron 2010
Gate defined Schottky diode2009
Cobalt silicide schottky diode on isolated well2009
Efficient test structure for non-volatile memory and other semiconductor integra2005