{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Gate structures with increased etch margin for self-aligned contact and the method of forming the same", "item": "https://www.patentleaderboard.com/patent/6566236"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Gate structures with increased etch margin for self-aligned contact and the method of forming the same

Gate structures with increased etch margin for self-aligned contact and the method of forming the same

US Patent 6566236 · Granted May 20, 2003

Estimated economic value: $9,756,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Light detecting and ranging (LiDAR) devices and the like2025
Toilet bowl bidet capable of preventing droplets from splashing when toilet is f2025
Atomic layer etching for subtractive metal etch2025
Expanded foam solution and thermosetting expanded foam having excellent flame re2025
Carbon based depositions used for critical dimension control during high aspect 2025
Structures of gate contact formation for vertical transistors2025
Syndrome decoder circuit2025
Cutting insert for machine tools for metalworking2025
Methods of gate contact formation for vertical transistors2025
Apparatus and method of controlling image display2024
Crime type inference system and method based on text data2024
Cutting insert for machine tools for metalworking2024