Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel

Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel

US Patent 6563152 · Granted May 13, 2003

Estimated economic value: $40,032,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Compositional engineering of Schottky diode2025
Integrated circuit devices with FinFETs over gate-all-around transistors2025
Integrated circuit assemblies with stacked compute logic and memory dies2025
ESD protection decoupled from diffusion2025
Backend electrostatic discharge diode apparatus and method of fabricating the sa2025
Monolithic memory stack2024
Optical device having phase change material and associated methods2024
Method for fabricating transistor with thinned channel2024
Double-gated ferroelectric field-effect transistor2024
Optical switch having latched switch states and associated methods2023
Antiferroelectric gate dielectric transistors and their methods of fabrication2023
Thin film tunnel field effect transistors having relatively increased width2023