Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Low defect axially grown single crystal silicon carbide

Low defect axially grown single crystal silicon carbide

US Patent 6562130 · Granted May 13, 2003

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

High quality silicon carbide crystals and method of making the same2020
Tantalum based crucible2006
Apparatus for growing low defect density silicon carbide2005
Apparatus for growing low defect density silicon carbide2005
Apparatus for growing low defect density silicon carbide2005
Apparatus for growing low defect density silicon carbide2005
Apparatus for growing low defect density silicon carbide2005
Apparatus for growing low defect density silicon carbide2005
Apparatus for growing low defect density silicon carbide2005
Method for growing single crystal silicon carbide2003
Method for growing single crystal silicon carbide2003
Method for growing single crystal silicon carbide2003