| 7056383 |
Tantalum based crucible |
Heikki I. Helava |
2006-06-06 |
| 6863728 |
Apparatus for growing low defect density silicon carbide |
Yury Alexandrovich Vodakov, Evgeny Nikolaevich Mokhov, Alexandr Dmitrievich Roenkov, Yury Nikolaevich Makarov, Sergei Yurievich Karpov +2 more |
2005-03-08 |
| 6562131 |
Method for growing single crystal silicon carbide |
Yury Alexandrovich Vodakov, Evgeny Nikolaevich Mokhov, Alexandr Dmitrievich Roenkov, Yury Nikolaevich Makarov, Sergei Yurievich Karpov +2 more |
2003-05-13 |
| 6562130 |
Low defect axially grown single crystal silicon carbide |
Yury Alexandrovich Vodakov, Evgeny Nikolaevich Mokhov, Alexandr Dmitrievich Roenkov, Yury Nikolaevich Makarov, Sergei Yurievich Karpov +2 more |
2003-05-13 |
| 6547877 |
Tantalum crucible fabrication and treatment |
Yury Alexandrovich Vodakov, Evgeny Nikolaevich Mokhov, Alexandr Dmitrievich Roenkov, Yury Nikolaevich Makarov, Sergei Yurievich Karpov +2 more |
2003-04-15 |
| 6537371 |
Niobium crucible fabrication and treatment |
Yury Alexandrovich Vodakov, Evgeny Nikolaevich Mokhov, Alexandr Dmitrievich Roenkov, Yury Nikolaevich Makarov, Sergei Yurievich Karpov +2 more |
2003-03-25 |
| 6534026 |
Low defect density silicon carbide |
Yury Alexandrovich Vodakov, Evgeny Nikolaevich Mokhov, Alexandr Dmitrievich Roenkov, Yury Nikolaevich Makarov, Sergei Yurievich Karpov +2 more |
2003-03-18 |
| 6508880 |
Apparatus for growing low defect density silicon carbide |
Yury Alexandrovich Vodakov, Evgeny Nikolaevich Mokhov, Alexandr Dmitrievich Roenkov, Yury Nikolaevich Makarov, Sergei Yurievich Karpov +2 more |
2003-01-21 |
| 6428621 |
Method for growing low defect density silicon carbide |
Yury Alexandrovich Vodakov, Evgeny Nikolaevich Mokhov, Alexandr Dmitrievich Roenkov, Yury Nikolaevich Makarov, Sergei Yurievich Karpov +2 more |
2002-08-06 |
| 6261363 |
Technique for growing silicon carbide monocrystals |
Yury Alexandrovich Vodakov, Evgeny Nikolaevich Mokhov, Alexandr Dmitrievich Roenkov, Yury Nikolaevich Makarov, Sergei Yurievich Karpov +2 more |
2001-07-17 |