Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Integrated circuit structure having a charge injection barrier

Integrated circuit structure having a charge injection barrier

US Patent 6528829 · Granted Mar 4, 2003

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of forming a gate contact2015
Leakage barrier for GaN based HEMT active device2014
Leakage barrier for GaN based HEMT active device2014
Direct growth of diamond in backside vias for GaN HEMT devices2013
Leakage barrier for GaN based HEMT active device2011
Club extension to a T-gate high electron mobility transistor2009
Magnetoresistive sensor with antiferromagnetic exchange-coupled structure having2008
Hard substrate wafer sawing process2006
Low turn-on voltage, non-electron blocking double HBT structure2006
Double HBT base metal micro-bridge2005
Low leakage schottky diode2004
Fully relaxed channel HEMT device2004