Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Direct growth of diamond in backside vias for GaN HEMT devices

Direct growth of diamond in backside vias for GaN HEMT devices

US Patent 8575657 · Granted Nov 5, 2013

Estimated economic value: $40,259,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device passive thermal management2023
Semiconductor device passive thermal management2022
Semiconductor devices using insulator-metal phase change materials and method fo2021
Semiconductor devices using insulator-metal phase change materials and method fo2020
Wafer-scale catalytic deposition of black phosphorus2020
Nano-imprinting using high-pressure crystal phase transformations2019
Nano-imprinting using high-pressure crystal phase transformations2019
Microelectronic RF substrate with an integral isolator/circulator2019
Low power threshold integrated micro-plasma limiter2017
Vertical cavity surface emitting laser with composite reflectors2017
Microfluidic impingement jet cooled embedded diamond GaN HEMT2016
Microfluidic impingement jet cooled embedded diamond GaN HEMT2016