Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Insulated gate semiconductor device with high minority carrier injection and low on-voltage by enlarged pn-junction area

Insulated gate semiconductor device with high minority carrier injection and low on-voltage by enlarged pn-junction area

US Patent 6509610 · Granted Jan 21, 2003

Estimated economic value: $440,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device2017
Ohmic electrode and method of forming the same2014
Semiconductor device and manufacturing method of semiconductor device2014
Method of forming an OHMIC contact on a P-type 4H-SIC substrate2011
Semiconductor devices and manufacturing method thereof2011
Semiconductor device having a high withstand voltage2009
Field-effect-type semiconductor device2005
High withstand voltage field effect semiconductor device with a field dispersion2005
Semiconductor device and process for producing the device2003
Liquid crystal antidazzle mirror1989
Liquid crystal antidazzle mirror1988
Facsimile transceiver1985