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Home › Method for fabricating a bipolar transistor of the self-aligned double-polysilicon type with a heterojunction base and corresponding transistor

Method for fabricating a bipolar transistor of the self-aligned double-polysilicon type with a heterojunction base and corresponding transistor

US Patent 6472262 · Granted Oct 29, 2002

Estimated economic value: $11,961,000 ⓘ

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