Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for reducing surface humps of doped amorphous silicon layer

Method for reducing surface humps of doped amorphous silicon layer

US Patent 6403443 · Granted Jun 11, 2002

Estimated economic value: $2,096,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Game mode display method2025
Gate driving circuit and display device2025
Molding machines for flexible production of rebars of bottom, web, and top plate2025
Method of reducing charging damage to integrated circuits during semiconductor m2009
Method of reducing charging damage to integrated circuits during semiconductor m2007
Method of reducing charging damage to integrated circuits during semiconductor m2007
Method for forming polysilicon germanium layer2005
Horizontal-type silicon-nitride furnace2000
Fuzzy logic method and system for adjustment of priority rating of work in proce1998
SRAM resistor tab doping by plug implant from buried contact1996
Formation of vertical polysilicon resistor having a nitride sidewall for small s1994
Locos isolation scheme for small geometry or high voltage circuit1993