Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High-voltage complementary bipolar and BiCMOS technology using double expitaxial growth

High-voltage complementary bipolar and BiCMOS technology using double expitaxial growth

US Patent 6365447 · Granted Apr 2, 2002

Estimated economic value: $10,016,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Monolithic integration of diverse device types with shared electrical isolation2025
Junction field-effect transistors implemented in a wide bandgap semiconductor ma2025
Multi-channel transistor2024
Feature-space clustering for physiological cycle classification2024
Monolithic integration of diverse device types with shared electrical isolation2023
Bidirectional switches with active substrate biasing2023
Semiconductor structure employing conductive paste on lead frame2021
Adaptive radiation therapy using composite imaging slices2021
Device structure and manufacturing method using HDP deposited source-body implan2021
Methods and systems for near real-time lookalike audience expansion in ads targe2020
Motion management in MRI-guided Linac2020
System and method for real-time management of liquid bottles content in a bar or2020