Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device having successful schottky characteristics

Semiconductor device having successful schottky characteristics

US Patent 6348704 · Granted Feb 19, 2002

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Display device and method of producing display device2018
Nitride semiconductor2017
Epitaxial wafer for heterojunction type field effect transistor2015
Hetero junction field effect transistor and method of fabricating the same2011
Hetero junction field effect transistor and method of fabricating the same2010
Field-effect transistor2008
Field-effect transistor2008
Electrode employing nitride-based semiconductor of III-V group compound, and pro2006
Electrode structure for nitride III-V compound semiconductor devices2003
Methods for fabricating an electrode structure2002
Electrode structure and method for fabricating the same2001
Group III-V type nitride compound semiconductor device and method of manufacturi2001