Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Planarization of a polysilicon layer surface by chemical mechanical polish to improve lithography and silicide formation

Planarization of a polysilicon layer surface by chemical mechanical polish to improve lithography and silicide formation

US Patent 6346466 · Granted Feb 12, 2002

Estimated economic value: $7,726,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Damascene metal-insulator-metal (MIM) device with improved scaleability2016
Metal-insualtor-metal (MIM) device and method of formation thereof2015
Metal-insulator-metal (MIM) device and method of formation thereof2014
Diode and resistive memory device structures2014
Metal-insulator-metal-insulator-metal (MIMIM) memory device2014
Metal-insulator-metal (MIM) device and method of formation thereof2013
Damascene metal-insulator-metal (MIM) device with improved scaleability2012
Metal-insulator-metal-insulator-metal (MIMIM) memory device2012
Gettering/stop layer for prevention of reduction of insulating oxide in metal-in2012
Damascene metal-insulator-metal (MIM) device2012
Test structures for development of metal-insulator-metal (MIM) devices2011
Diode and resistive memory device structures2011