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Home › Method of forming high K tantalum pentoxide Ta2O5 instead of ONO stacked films to increase coupling ratio and improve reliability for flash memory devices

Method of forming high K tantalum pentoxide Ta2O5 instead of ONO stacked films to increase coupling ratio and improve reliability for flash memory devices

US Patent 6309927 · Granted Oct 30, 2001

Estimated economic value: $4,666,000 ⓘ

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