Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fabrication method for a high voltage electrical erasable programmable read only memory device

Fabrication method for a high voltage electrical erasable programmable read only memory device

US Patent 6274430 · Granted Aug 14, 2001

Estimated economic value: $1,143,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for manufacturing memory2005
Method for fabricating a non-volatile memory cell2001
Method for fabricating a non-volatile memory cell2001
Multi-phase mask using multi-layer thin films2001
Non-absorbing anti-reflective coated (ARC) reticle using thin dielectric films a2000
Selective partial curing of spin-on-glass by ultraviolet radiation to protect in1999
Non-absorbing anti-reflective coated (ARC) reticle using thin dielectric films a1998
Plasma damage monitor1998
Vertical channel masked ROM memory cell with epitaxy1998
Method for plasma hardening of patterned photoresist layers1997
Method of making vertical channel mask ROM1996