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Home › Method of fabrication a self-aligned polysilicon/diffusion barrier/oxygen stable sidewall bottom electrode structure for high-K DRAMS

Method of fabrication a self-aligned polysilicon/diffusion barrier/oxygen stable sidewall bottom electrode structure for high-K DRAMS

US Patent 6184074 · Granted Feb 6, 2001

Estimated economic value: $64,248,000 ⓘ

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