Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High power waveguide photodiode with an absorption layer with reduced absorption coefficient

High power waveguide photodiode with an absorption layer with reduced absorption coefficient

US Patent 6177686 · Granted Jan 23, 2001

Estimated economic value: $4,501,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Low turn-on voltage, non-electron blocking double HBT structure2006
Double HBT base metal micro-bridge2005
Low leakage schottky diode2004
Ultra high speed heterojunction bipolar transistor having a cantilevered base2004
Interstitial diffusion barrier2004
Low leakage Schottky diode2003
Low dark current photodiode2003
Monolithic light reflector2003
Integrated circuit structure having a charge injection barrier2003
Heterojunction bipolar transistor with reduced thermal resistance2002
Responsivity photodetector2000