Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a composite interpoly gate dielectric

Method of forming a composite interpoly gate dielectric

US Patent 6163049 · Granted Dec 19, 2000

Estimated economic value: $3,857,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Multi-time programmable non-volatile memory cell2022
Multi-time programmable non-volatile memory cell2019
Semiconductor device having metallized interconnect structure and method of fabr2004
EEPROM cell with trench coupling capacitor2004
MOSFET test structure for capacitance-voltage measurements2002
Method of forming a composite interpoly gate dielectric2002
Method and apparatus for reliability testing of integrated circuit structures an2001
Interconnection device for low and high current stress electromigration and corr2001
Sensitive technique for metal-void detection2000
Methods for forming a control gate apparatus in non-volatile memory semiconducto2000
Detection of process-induced damage on transistors in real time1999
Sensitive method of evaluating process induced damage in MOSFETs using a differe1999