Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method and apparatus for achieving etch rate uniformity in a reactive ion etcher

Method and apparatus for achieving etch rate uniformity in a reactive ion etcher

US Patent 6132632 · Granted Oct 17, 2000

Estimated economic value: $30,556,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Non-localized spin valve multi-free-layer reader hybridized with spin orbit torq2025
Buffer layers and interlayers that promote BiSbx (012) alloy orientation for sot2025
Non-localized spin valve reader hybridized with spin orbit torque layer2025
Higher areal density non-local spin orbit torque (SOT) writer with topological i2025
SOT reader with recessed SOT topological insulator material2025
Spin-orbit torque SOT reader with recessed spin hall effect layer2025
Herbicidal compounds2025
Highly textured 001 BiSb and materials for making same2024
Spin-orbit torque (SOT) writer with topological insulator materials2024
TDMR SOT read heads having recessed topological insulator materials2024
Topological insulator based spin torque oscillator reader2024
Doping process to refine grain size for smoother BiSb film surface2024