Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Hydrogen ambient process for low contact resistivity PdGe contacts to III-V materials

Hydrogen ambient process for low contact resistivity PdGe contacts to III-V materials

US Patent 6103614 · Granted Aug 15, 2000

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Fin cut and fin trim isolation for advanced integrated circuit structure fabrica2025
Trench plug hardmask for advanced integrated circuit structure fabrication2025
Fin end plug structures for advanced integrated circuit structure fabrication2025
Trench contact structures for advanced integrated circuit structure fabrication2025
Dual metal silicide structures for advanced integrated circuit structure fabrica2025
Gate line plug structures for advanced integrated circuit structure fabrication2025
Plugs for interconnect lines for advanced integrated circuit structure fabricati2025
Integrated circuits with recessed gate electrodes2024
Contact over active gate structures for advanced integrated circuit structure fa2024
Confined epitaxial regions for semiconductor devices2024
Gate cut and fin trim isolation for advanced integrated circuit structure fabric2024
Fin cut and fin trim isolation for advanced integrated circuit structure fabrica2024