{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Partial silicidation method to form shallow source/drain junctions", "item": "https://www.patentleaderboard.com/patent/6071782"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Partial silicidation method to form shallow source/drain junctions

Partial silicidation method to form shallow source/drain junctions

US Patent 6071782 · Granted Jun 6, 2000

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Back-to-back metal/semiconductor/metal (MSM) Schottky diode2019
System and method for generating a yield forecast based on wafer acceptance test2015
Metal oxide semiconductor thin film transistors2013
Solution process for fabricating a textured transparent conductive oxide (TCO)2013
Multilayered barrier metal thin-films2012
Nanotip electrode electroluminescence device2012
Germanium film optical device2012
CMOS imager flush reset2011
Back-to-back metal/semiconductor/metal (MSM) Schottky diode2011
Germanium film optical device fabricated on a glass substrate2011
Method for forming an iridium oxide (IrOx) nanowire neural sensor array2011
Ge imager for short wavelength infrared2011