Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming an ohmic contact to a III-V semiconductor material

Method of forming an ohmic contact to a III-V semiconductor material

US Patent 6057219 · Granted May 2, 2000

Estimated economic value: $77,172,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Shielding structure, semiconductor package structure with shielding structure2022
Abrasive articles and methods of forming the same2020
Abrasive article having a core including a composite material2019
Plasma processing method2002
Method of forming a contact2001
Method utilizing an etch stop layer1998
Method utilizing an etch stop layer1998
Method of forming an electrically conductive polymer bump over an aluminum elect1997
III-V semiconductor gate structure and method of manufacture1997
Self-aligned FET having etched ohmic contacts1996
Self-aligned FET having etched ohmic contacts1996
Method of making symmetrical and asymmetrical MESFETS1996