Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for fabricating semiconductor device having capacitor increased in capacitance by using hemispherical grains without reduction of dopant concentration

Method for fabricating semiconductor device having capacitor increased in capacitance by using hemispherical grains without reduction of dopant concentration

US Patent 6020248 · Granted Feb 1, 2000

Estimated economic value: $32,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device and method for manufacturing the same2003
Method of manufacturing semiconductor device2001
Semiconductor device with unbreakable testing elements for evaluating components2001
Process for forming a capacitor incorporated in a semiconductor device2000
Semiconductor device with unbreakable testing elements for evaluating components1999
Capacitor incorporated in semiconductor device having a lower electrode composed1999
Method of fabricating a semiconductor integrated circuit having a capacitor with1999
Method for forming a capacitor in a memory cell in a dynamic random access memor1999
Semiconductor device fabrication method for preventing tungsten from removing1998
Semiconductor device having a wiring layer and method for manufacturing same1998
Method of roughening a polysilicon layer of a random crystal structure included 1998
Semiconductor device having multilayered wiring structure1998