Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6593233 | Semiconductor device and method for manufacturing the same | Kazuki Miyazaki, Kazunobu Shigehara | 2003-07-15 |
| 6258690 | Method of manufacturing semiconductor device | — | 2001-07-10 |
| 6204076 | Semiconductor device with unbreakable testing elements for evaluating components and process of fabrication thereof | — | 2001-03-20 |
| 6146966 | Process for forming a capacitor incorporated in a semiconductor device | Toshiyuki Hirota, Hirohito Watanabe, Fumiki Aiso, Shuji Fujiwara | 2000-11-14 |
| 6020248 | Method for fabricating semiconductor device having capacitor increased in capacitance by using hemispherical grains without reduction of dopant concentration | — | 2000-02-01 |
| 5969381 | Semiconductor device with unbreakable testing elements for evaluating components and process of fabrication thereof | — | 1999-10-19 |
| 5959326 | Capacitor incorporated in semiconductor device having a lower electrode composed of multi-layers or of graded impurity concentration | Fumiki Aiso, Hirohito Watanabe, Toshiyuki Hirota, Shuji Fujiwara | 1999-09-28 |
| 5956595 | Method of fabricating a semiconductor integrated circuit having a capacitor with lower electrode comprising titanium nitride | — | 1999-09-21 |
| 5897983 | Method for forming a capacitor in a memory cell in a dynamic random access memory device | Toshiyuki Hirota, Tomomi Kurokawa, Kazuki Yokota | 1999-04-27 |
| 5851581 | Semiconductor device fabrication method for preventing tungsten from removing | — | 1998-12-22 |
| 5843840 | Semiconductor device having a wiring layer and method for manufacturing same | Kazuki Miyazaki, Kazunobu Shigehara | 1998-12-01 |
| 5811333 | Method of roughening a polysilicon layer of a random crystal structure included in a semiconductor device | — | 1998-09-22 |
| 5798569 | Semiconductor device having multilayered wiring structure | Kazuki Miyazaki, Kazunobu Shigehara | 1998-08-25 |
| 5700710 | Process of fabricating capacitor having waved rough surface of accumulating electrode | — | 1997-12-23 |
| 5700738 | Method for producing a semiconductor device | — | 1997-12-23 |
| 5691229 | Process of fabricating dynamic random access memory cell having inter-level insulating structure without silicon nitride layer between access transistor and storage node | Kenji Okamura | 1997-11-25 |
| 5525540 | Method for manufacturing silicon layer having impurity diffusion preventing layer | Fumiki Aisou | 1996-06-11 |
| 5521126 | Method of fabricating semiconductor devices | Kenji Okamura, Yasuhide Den | 1996-05-28 |
| 5441594 | Method of manufacturing semiconductor device | — | 1995-08-15 |
| 5372962 | Method of making a semiconductor integrated circuit device having a capacitor with a porous surface of an electrode | Toshiyuki Hirota, Ichirou Honma, Hirohito Watanabe | 1994-12-13 |
| 5187557 | Semiconductor capacitor with a metal nitride film and metal oxide dielectric | — | 1993-02-16 |