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Home › Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings, typically in combination with spacer material to control spacing between gate layer and electron-emissive elements

Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings, typically in combination with spacer material to control spacing between gate layer and electron-emissive elements

US Patent 6019658 · Granted Feb 1, 2000

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