Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for forming a self-aligned contact

Method for forming a self-aligned contact

US Patent 6004870 · Granted Dec 21, 1999

Estimated economic value: $63,749,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of forming cross point type DRAM cell2004
Method for forming a self-aligned contact2003
Method for fabricating an open can-type stacked capacitor on an uneven surface2003
Cross point type DRAM cell composed of a pillar having an active region2003
Method of repairing semiconductor memory, electron-beam memory repairing apparat2002
Minimization-feasible word line structure for DRAM cell2002
Method for fabricating an open can-type stacked capacitor on an uneven surface2001
Method and system of interconnecting conductive elements in an integrated circui2001
Method for fabrication an open can-type stacked capacitor on local topology2001
Method of the simultaneous formation for the storage node contacts, bit line con2001
Method of repairing semiconductor memory, electron-beam memory repairing apparat1999
Trench-type semiconductor memory device1999